High Electron Mobility in Oxide Interfaces

One of the major and long-standing challenges of oxide 2DEGs is still to understand how to enhance the electron mobility. The mobility is still orders of magnitude lower than that of the conventional semiconductors and with the current fabrication method we still cannot fully control the charge at the interface. Here, I will present the recent activities of our group in this area where we try to push the mobility to record high values, i.e. the usage of the so-called modulation-doping technique has significantly increased the carrier mobility to mobility of 70.000 cm2/Vs and realization of quantum Hall effect in these films. These findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.