Spintronics Beyond MRAM: From Data Storage to Computing

QUEST Center event
No
Speaker
Konstantin Zvezdin, SpinEdge Ltd., Tel Aviv, Israel.
Date
- Add to Calendar 2025-12-11 12:30:00 2025-12-11 13:30:00 Spintronics Beyond MRAM: From Data Storage to Computing Spintronics, once primarily associated with magnetic data storage and commercial MRAM, is now emerging as a platform for energy-efficient analog computation, probabilistic hardware, and physics-driven AI acceleration. This talk reframes spintronic devices not as passive memory elements but as active computational primitives. We begin with the device-level ingredients, such as spin-orbit torque, interfacial anisotropy engineering, and thermal stochasticity, that underpin both MRAM and the next generation of spin-based compute devices. A key direction is the engineering of multilevel SOT-MRAM synapses, capable of stable, tunable conductance states with high on-chip density and inherently low leakage. These devices form the foundation of analog in-memory compute crossbars, designed to perform vector–matrix multiplication directly in the memory array with orders-of-magnitude energy savings. At the architectural level, I will present our approach to large-scale analog MAC arrays (from 16×16 tiles toward 2k×2k arrays), including strategies for adaptive quantization, device variability compensation, and binary-tree routing. Our methodology allows pre-trained AI models to be mapped onto analog arrays without retraining, while maintaining accuracy within a few percent of digital baselines. A complementary direction is probabilistic computing using stochastic MTJ devices (p-bits). By leveraging intrinsic thermal noise rather than suppressing it, these elements naturally implement hardware Boltzmann samplers and Ising-type inference engines. I will highlight how such devices can serve as quantum-inspired accelerators and integrate with analog crossbars for hybrid deterministic–stochastic computation. The talk will also touch upon our experimental and theoretical works on broadband spin-torque rectification in MTJs, demonstrating GHz-range field-free detection relevant to sensory front-ends in embedded or edge-AI systems. Overall, the emerging picture is a unified spintronic computing stack, from device physics to crossbar architectures and model-level adaptation, enabling efficient, off-grid AI inference and probabilistic computing. Spintronics, in this context, moves beyond its role in non-volatile memory and becomes a central technology for post-CMOS, physics-native computation. Key ReferencesS.I. Kiselev et al., Nature 425, 380 (2003).A. Tulapurkar et al., Nature 438, 339 (2005).A.G. Buzdakov, K.A. Zvezdin et al., Phys. Rev. Appl. 15, 054047 (2021).P.N. Skirdkov, K.A. Zvezdin, Ann. Phys. 532, 1900460 (2020).M. Lobkova, D. Potapov, D. Leshchiner, N. Karasikov, K. Zvezdin, "Multilevel-SOT-MRAM-based spintronic memory cells for energy-efficient and accurate analog inference of artificial neural networks", Proc. SPIE 13586, Spintronics XVIII, 135860O (2025);  Resnick המחלקה לפיזיקה physics.dept@mail.biu.ac.il Asia/Jerusalem public
Place
Resnick
Abstract
Spintronics, once primarily associated with magnetic data storage and commercial MRAM, is now emerging as a platform for energy-efficient analog computation, probabilistic hardware, and physics-driven AI acceleration. This talk reframes spintronic devices not as passive memory elements but as active computational primitives.
 
We begin with the device-level ingredients, such as spin-orbit torque, interfacial anisotropy engineering, and thermal stochasticity, that underpin both MRAM and the next generation of spin-based compute devices. A key direction is the engineering of multilevel SOT-MRAM synapses, capable of stable, tunable conductance states with high on-chip density and inherently low leakage. These devices form the foundation of analog in-memory compute crossbars, designed to perform vector–matrix multiplication directly in the memory array with orders-of-magnitude energy savings.
 
At the architectural level, I will present our approach to large-scale analog MAC arrays (from 16×16 tiles toward 2k×2k arrays), including strategies for adaptive quantization, device variability compensation, and binary-tree routing. Our methodology allows pre-trained AI models to be mapped onto analog arrays without retraining, while maintaining accuracy within a few percent of digital baselines.
 
A complementary direction is probabilistic computing using stochastic MTJ devices (p-bits). By leveraging intrinsic thermal noise rather than suppressing it, these elements naturally implement hardware Boltzmann samplers and Ising-type inference engines. I will highlight how such devices can serve as quantum-inspired accelerators and integrate with analog crossbars for hybrid deterministic–stochastic computation.
 
The talk will also touch upon our experimental and theoretical works on broadband spin-torque rectification in MTJs, demonstrating GHz-range field-free detection relevant to sensory front-ends in embedded or edge-AI systems.
 
Overall, the emerging picture is a unified spintronic computing stack, from device physics to crossbar architectures and model-level adaptation, enabling efficient, off-grid AI inference and probabilistic computing. Spintronics, in this context, moves beyond its role in non-volatile memory and becomes a central technology for post-CMOS, physics-native computation.

 
Key References
  1. S.I. Kiselev et al., Nature 425, 380 (2003).
  2. A. Tulapurkar et al., Nature 438, 339 (2005).
  3. A.G. Buzdakov, K.A. Zvezdin et al., Phys. Rev. Appl. 15, 054047 (2021).
  4. P.N. Skirdkov, K.A. Zvezdin, Ann. Phys. 532, 1900460 (2020).
  5. M. Lobkova, D. Potapov, D. Leshchiner, N. Karasikov, K. Zvezdin, "Multilevel-SOT-MRAM-based spintronic memory cells for energy-efficient and accurate analog inference of artificial neural networks", Proc. SPIE 13586, Spintronics XVIII, 135860O (2025);


 

תאריך עדכון אחרון : 27/11/2025