HgTe quantum wells. Energy spectrum and transport phenomena. Theory-versus-experiment.

QUEST Center event
No
Speaker
Grigori Minkov (Ural Federal University)
Date
07/01/2018 - 15:30 - 14:30Add to Calendar 2018-01-07 14:30:00 2018-01-07 15:30:00 HgTe quantum wells. Energy spectrum and transport phenomena. Theory-versus-experiment. I plan to make a short review of the features of the energy spectrum of carriers in the quantum wells of a gapless semiconductor HgTe, in which, depending on the thickness of the well, the "normal", inverted and semimetallic spectra are realized. I will review the edge, topologically protected states, that should arise in structures with an inverted spectrum (which is realized at a quantum well thickness greater than d_c = 6.3 nm. In more detail, I will discuss the current state of experimental results on the study of the energy spectrum, the role of edge states in kinetic effects. For a real understanding of any experimental results the reliable knowledge of the energy spectrum is necessary. Theoretically, it has been studied quite well and in detail. However, by the present time, quite a lot of contradictions have accumulated between theory and experiment. Therefore, our main attention will be paid to our experimental studies of the spectrum of the valence band in structures with a well thickness close to d_c and with d> d_с [1,2,3].  It will be shown that interface inversion asymmetry leads to a large spin-orbit splitting, which radically changes the spectrum of the valence band. -------------------- 1. G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, M. O. Nestoklon, S. A. Dvoretski, and N. N. Mikhailov, Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point, , Phys. Rev. B 93, 155304 – Published 11 April 2016. 2. G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretski, and N. N. Mikhailov, Valence band energy spectrum of HgTe quantum wells with an inverted band structure, Phys. Rev. B 96, 035310 (2017) - Published 26 July 2017 3. G.M. Minkov et al, Conductance of a Lateral p–nJunction  in TwoDimensional HgTe Structures with an Inverted Spectrum: The Role of Edge States  JETP Letters, 2015, Vol. 101, No. 7, pp. 469–473, 2015 Resnick Building 209, room 210 ** * NOTE UNUSUAL DAY *** המחלקה לפיזיקה physics.dept@mail.biu.ac.il Asia/Jerusalem public
Place
Resnick Building 209, room 210 ** * NOTE UNUSUAL DAY ***
Abstract

I plan to make a short review of the features of the energy spectrum of carriers in the quantum wells of a gapless semiconductor HgTe, in which, depending on the thickness of the well, the "normal", inverted and semimetallic spectra are realized. I will review the edge, topologically protected states, that should arise in structures with an inverted spectrum (which is realized at a quantum well thickness greater than d_c = 6.3 nm.

In more detail, I will discuss the current state of experimental results on the study of the energy spectrum, the role of edge states in kinetic effects. For a real understanding of any experimental results the reliable knowledge of the energy spectrum is necessary. Theoretically, it has been studied quite well and in detail. However, by the present time, quite a lot of contradictions have accumulated between theory and experiment. Therefore, our main attention will be paid to our experimental studies of the spectrum of the valence band in structures with a well thickness close to d_c and with d> d_с [1,2,3].  It will be shown that interface inversion asymmetry leads to a large spin-orbit splitting, which radically changes the spectrum of the valence band.

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1. G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, M. O. Nestoklon, S. A. Dvoretski, and N. N. Mikhailov, Spin-orbit splitting of valence and conduction bands in HgTe quantum wells near the Dirac point, , Phys. Rev. B 93, 155304 – Published 11 April 2016.

2. G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, A. A. Sherstobitov, A. V. Germanenko, S. A. Dvoretski, and N. N. Mikhailov, Valence band energy spectrum of HgTe quantum wells with an inverted band structure, Phys. Rev. B 96, 035310 (2017) - Published 26 July 2017

3. G.M. Minkov et al, Conductance of a Lateral p–nJunction  in TwoDimensional HgTe Structures with an Inverted Spectrum: The Role of Edge States  JETP Letters, 2015, Vol. 101, No. 7, pp. 469–473, 2015

תאריך עדכון אחרון : 21/11/2017