The talk is focused on the origin of our recently observed interfacial-ferroelectricity in hexagonal Boron Nitride (hBN). We stack two layers of the hBN crystal in a parallel lattice orientation, unlike the natural symmetric stacking configurations. We find a stable dipole moment pointing out of the plane, and switch its orientation by scanning a biased tip at the surface. The switching involves a lateral sliding by one atomic spacing between the layers, which is observed directly by surface potential microscopy . If time allows, I will also discuss our efforts to induce intrinsic electric and magnetic gauge-fields in graphene by particular strain-engineering schemes .
תאריך עדכון אחרון : 02/03/2021