Full Counting Statistics of the Interacting Resonant Level Model

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Sam Carr, Institute for Theoretical Condensed Matter, Karlsruhe Institute of Technology
24/04/2012 - 12:15
Resnick Building 209, room 210

We discuss the full counting statistics of charge transport through a nano device and introduce a general way to calculate it numerically at zero-temperature.  We apply this to a strongly correlated model: the interacting resonant level model; where it turns out we can also calculate the full counting statistics exactly, to good agreement with the numerics.  From the analytic properties of the full solution, we show that the system undergoes charge fractionalization when the bias voltage exceeds a certain threshold.