Full Counting Statistics of the Interacting Resonant Level Model
Seminar
Speaker
Sam Carr, Institute for Theoretical Condensed Matter, Karlsruhe Institute of Technology
Date
24/04/2012 - 15:15Add to Calendar
2012-04-24 15:15:00
2012-04-24 15:15:00
Full Counting Statistics of the Interacting Resonant Level Model
We discuss the full counting statistics of charge transport through a nano device and introduce a general way to calculate it numerically at zero-temperature. We apply this to a strongly correlated model: the interacting resonant level model; where it turns out we can also calculate the full counting statistics exactly, to good agreement with the numerics. From the analytic properties of the full solution, we show that the system undergoes charge fractionalization when the bias voltage exceeds a certain threshold.
Resnick Building 209, room 210
Department of Physics
physics.dept@mail.biu.ac.il
Asia/Jerusalem
public
Place
Resnick Building 209, room 210
Abstract
We discuss the full counting statistics of charge transport through a nano device and introduce a general way to calculate it numerically at zero-temperature. We apply this to a strongly correlated model: the interacting resonant level model; where it turns out we can also calculate the full counting statistics exactly, to good agreement with the numerics. From the analytic properties of the full solution, we show that the system undergoes charge fractionalization when the bias voltage exceeds a certain threshold.
Last Updated Date : 07/03/2012
