Prof. Issai Shlimak

Prof. Issai Shlimak


Experimental studies of transport phenomena and electronic properties of disordered solids:

  • doped semiconductors
  • impure metals
  • conducting polymers
  • hopping conductivity
  • magnetoresistance
  • metal-insulator transition
  • electron-electron interactions


Present Position:

Professor of Physics

Head of Semiconductor Laboratory

Jack and Pearl Resnick Institute of Advanced Technology,

Incumbent of the Erick and Sheila Samson Chair of Semiconductor Technology



1979 D.Sc. (Habilitation) A. F. Ioffe Physico-Technical Institute Russian Academy of Sciences, St.-Petersburg (Leningrad), Russia

1969 Ph.D. A. F. Ioffe Physico-Technical Institute Russian Academy of Sciences, St.-Petersburg, Russia

1964 M.Sc. Baku State University


Employment experience:

1990present Bar-Ilan University, Professor of Physics

1981 – 1990 A.F. Ioffe Physico-Technical Institute, Leningrad, USSR, Leading Researcher

1967 – 1981 A.F. Ioffe Physico-Technical Institute Researcher, Senior Researcher


Area of scientific activity:

Physics and technology of semiconductors.

Isotopically engineered semiconductors, neutron-transmutation doping.

Electron transport phenomena in doped semiconductors, amorphous films, conducting polymers.

Hopping conductivity, electron-electron interaction, metal-insulator transition.


Teaching activity:

Courses for students:

Physics and technology of semiconductors

Non-crystalline semiconductors and conducting polymers

Physics of semiconductor devices

Solid state electronics and optoelectronics.


Honors and awards:

Council of Ministers of the USSR Prize with a Medal and Diploma, 1983.

Barecha Fellowship for outstanding immigrant scientists, the Israel Academy of Sciences and Humanities, 1990-1995.


Electron transport in a slot-gate Si MOSFET. I. Shlimak, V. Ginodman, A. Butenko, K.-J. Friedland and S.V. Kravchenko, Europhys. Letters 82, 47001 (2008).

Longitudinal resistivity in the quantum Hall effect regime in a split gate Si MOSFET with variable electron density. I. Shlimak, K.-J. Friedland, S.V. Kravchenko, V. Ginodman, A. Butenko, and T.M. Klapwijk, Phys. Stat. Sol. (c) 5, 839 (2008).

Long-lived spin echoes in a magnetically dilute system: An NMR study of Ge single crystals. A.M. Panich, N.A. Sergeev, and I. Shlimak, Phys. Rev. B 76, 155201 (2007).

The Raman spectroscopy of neutron transmutation doping isotope 74Germanium nanocrystals embedded in SiO2 matrix. Y. Hu, T. Lu, S. Dun, Q. Hu, N. Huang, S. Zhang, B. Tang, J. Dai, L. Resnick, Issai Shlimak, S. Zhu, Q. Wei, L. Wang, Solid State Commun. 141, 514-518 (2007).

Quantum information processing based on 31P nuclear spin qubits in a quasi-one-dimensional 28Si nanowire. I. Shlimak and I. Vagner, Phys. Rev. B 75, 045336 (2007).

Disorder-induced features of the transverse resistance in a Si-MOSFET in the quantum Hall effect regime. I. Shlimak, K.-J. Friedland, V. Ginodman, and S. V. Kravchenko, Phys. Stat. Sol. (c) 3, 309 (2006(.

Manifestation of the exchange enhancement of valley splitting in the quantum Hall effect regime. I. Shlimak, V. Ginodman, K.-J. Friedland, and S.V. Kravchenko, Phys. Rev. B 73, 205324 (2006).

Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime. I. Shlimak, V. Ginodman, A. Gerber, A. Milner, K.-J. Friedland, D.J. Paul, Europhys. Lett., 69, 997-1002 (2005).

Isotopically engineered silicon nanostructures in quantum computation and communication. Issai Shlimak, HAIT Journal of Science and Engineering, 1, 196-206 (2004).

Conductivity of weakly and strongly localized electrons in n-type Si/SiGe heterostructure. I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D.K. Maude, A. Gerber, A. Milner, D.J. Paul, Phys. Stat. Sol. (c) 1, 67 (2004).

Isotopically engineered Si as a promising material for spintronics and semiconductor-based nuclear spin quantum computers. I. Shlimak and I.D. Vagner, In: Recent Trends in Theory of Physical Phenomena in High Magnetic Fields, I.D. Vagner et al. (eds.) (Kluwer Academic Publishers, Printed in the Netherlads, 2003), p. 281

Longitudinal conductivity in Si/SiGe eterostructure at integer filling factors. I. Shlimak, V. Ginodman, M. Levin, M. Potemski, D.K. Maude, K.-J. Friedland and D.J. Paul, Phys. Rev. B 68, 075321 (2003).  


86-432: Seminar on selected topics

86-862: Physics of semiconductors

86-866: Physics of semiconductor devices

86-883: Physics of low-dimensional systems

86-893: Introduction to nano-electronics